Recent developments in silicon optoelectronic devices
نویسنده
چکیده
Due to the rapid growth of the internet and multi-media communication networks, there are urgent needs and tremendous commercial values in the development of optoelectronics integrated circuits (OEICs). This work reviews the recent developments and the prospect of silicon-based integrated optoelectronic circuits (Si-OEICs). The technological aspects of porous silicon and oxynitride devices for integrated optoelectronic applications are discussed. Some optoelectronic devices being realized with these technologies are described. Recent achievements indicate that the present constraints for using Si-based materials in optoelectronics are mainly technological rather than physical. Once these technological difficulties are resolved, the realization and applications of Si-OEICs will grow rapidly. 2002 Elsevier Science Ltd. All rights reserved.
منابع مشابه
Sol – Gel Spin Coated Cadmium Sulphide Thin Films on Silicon (1 0 0) Substrates for Optoelectronic Applications
Cadmium chalcogenides with appropriate band gap energy have been attracting a great deal of attention because of their potential applications in optoelectronic devices. In this work CdS thin films were deposited on p – type silicon substrates by sol – gel spin coating method at different substrate temperatures. The CdS deposited wafers were characterized by X‐ray diffracti...
متن کاملPhotonic Materials and Devices
Our recent advances in solid-state optoelectronic materials and devices will be reviewed. In the area of glass optics, fabrication of novel microstructured and multi-core fibers and their use in realizing single mode lasers will be summarized. In organic and plastic optics, photorefractive polymers for 3D display applications and nonlinear optical polymers for high speed modulators in RF photon...
متن کاملUltrafast Submicron Thermoreflectance Imaging
Both the miniaturization of electronic and optoelectronic devices and circuits and the increased operation speeds of electronic devices have exacerbated localized heating problems. Steady-state and transient characterization of temperature distribution in devices and interconnects are important for performance and reliability analysis. In this paper we review recent developments in ultrafast su...
متن کاملNano-optoelectronic Integration on Silicon Nano-optoelectronic Integration on Silicon Nano-optoelectronic Integration on Silicon
All rights reserved INFORMATION TO ALL USERS The quality of this reproduction is dependent upon the quality of the copy submitted. In the unlikely event that the author did not send a complete manuscript and there are missing pages, these will be noted. Also, if material had to be removed, a note will indicate the deletion. Modern silicon technology offers unprecedented spatial and temporal con...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 42 شماره
صفحات -
تاریخ انتشار 2002